SUT465N Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Dual NPN+PNP complementary Bipolar transistor

Electrical Characteristics [ Tr1 ]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=10μA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=75V, I_E=0
DC current gain
h_FE
V_CE=10V, I_C=10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=150mA, I_B=15mA
V_CE=20V, I_C=20mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
Delay time
Rise time
t_d
V_CC=30V_dc, V_BE(off)=0.5V_dc,
t_r
I_C=150mA_dc, I_B1=15mA_dc
Storage time
Fall Time
t_s
V_CC=30V_dc,I_C=150mA_dc,
t_f
I_B1=I_B2=15mA_dc
SUT465N
(Ta=25°C)
Min. Typ. Max. Unit
75
-
-
V
40
-
-
V
5
-
-
V
-
-
20
nA
100
-
-
-
-
-
0.4
V
250
-
-
MHz
-
-
8
pF
-
-
10
ns
-
-
25
ns
-
-
225
ns
-
-
60
ns
Electrical Characteristics [ Tr2 ]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=-10μA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=-10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=-40V, I_E=0
DC current gain
h_FE
V_CE=-10V, I_C=-10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=-150mA, I_B=-15mA
V_CE=-5.0V, I_C=-20mA,
f=100MHz
V_CB=-10V, I_E=0, f=1MHz
Turn-on time
Delay time
Rise time
t_on
t_d
V_CC=-30V_dc,I_C=-150mA_dc,
I_B1=-15mA_dc
t_r
Turn-off time
Storage time
Fall time
t_off
t_s
V_CC=-6.0V_dc,I_C=-150mA_dc,
I_B1=I_B2=-15mA_dc
t_f
(Ta=25°C)
Min. Typ. Max. Unit
-60
-
-
V
-40
-
-
V
-5
-
-
V
-
-
-20
nA
100
-
-
-
-
-
-0.4
V
200
-
-
MHz
-
-
8
pF
-
-
45
ns
-
-
10
ns
-
-
40
ns
-
-
100
ns
-
-
80
ns
-
-
30
ns
KSD-T5P006-001
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