SUT465N Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – Dual NPN+PNP complementary Bipolar transistor

SUT465N
Dual NPN+PNP complementary Bipolar transistor
Descriptions
• Complex type bipolar transistor
Features
• Reduce quantity of parts and mounting cost
• High collector power dissipation : P_C=300mW(Max.)
• 2 NPN+PNP Chips in SOT-26 PKG
Package : SOT-26
Ordering Information
Type NO.
Marking
SUT465N
5N◇□
◇: Hfe rank, □ : Year & Week Code
PIN Assignment & Description
Package Code
SOT-26
Pin
1
2
3
4
5
6
[Pin Assignment]
Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C**
T_J
T_stg
** : Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P006-001
Description
Emitter 2
Base 2
Collector 1
Emitter 1
Base 1
Collector 2
Ratings
Tr1 Tr2
75
-60
40
-40
5
-5
600
-600
1.2
-1.2
300
150
-55~150
Unit
V
V
V
mA(DC)
A(AC)
mW
°C
°C
1