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| SUT290 Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Dual NPN-PNP complementary Bipolar transistor | |||
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Electrical Characteristics [Tr1]
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
IC=50uA, IE=0
IC=1mA, IB=0
IC=50uA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=0.5A
IC=2A, IB=200mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
Electrical Characteristics [Tr2]
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
IC=-50uA, IE=0
IC=-1mA, IB=0
IC=-50uA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-0.1A
IC=-2A, IB=-200mA
VCE=-5V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
SUT290
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
32
-
-
V
5
-
-
V
-
-
1
μA
-
-
1
μA
120
-
320
-
-
0.5 0.8
V
-
100
-
MHz
-
30
-
pF
(Ta=25°C)
Min. Typ. Max. Unit
-40
-
-
V
-32
-
-
V
-5
-
-
-
-
-
-
V
-1
μA
-1
μA
120
-
320
-
-
-0.5 -0.8
V
-
150
-
MHz
-
50
-
pF
KSD-T7F006-001
2
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