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SUT290 Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – Dual NPN-PNP complementary Bipolar transistor
SUT290
Dual NPN-PNP complementary Bipolar transistor
Features
• Low VCE(sat)=0.5V (Typ.)
• Simplified circuit design
• Reduced component count
Applications
• Push-Pull or Totem-Pole configuration
• MOSFET and IGBT gate driving
• Motor, relay and solenoid driving
Description
The SUT290 is a Hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar technology. The SUT290 is housed in
dual island SOP-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
SOP-8
Internal schematic diagram
Ordering Information
Type NO.
SUT290
Marking
SUT290
Package Code
SOP-8
Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
VCBO
VCEO
VEBO
IC
PD※
Junction temperature
TJ
Storage temperature range
Tstg
※: When mounted on 40x40x0.8 ㎜ ceramic substrate
KSD-T7F006-001
Rating
Tr1 Tr2
40
-40
32
-32
5
-5
2
-2
2
1.4
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W/TOTAL
W/ELEMENT
°C
°C
1