SUT101N Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Epitaxial planar PNP/NPN silicon transistor

SUT101N
Electrical Characteristics [Tr1]
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV_CBO I_C=-50uA, I_E=0
-40
-
-
V
Collector-Emitter breakdown voltage
BV_CEO I_C=-1mA, I_B=0
-32
-
-
V
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BV_EBO
I_CBO
I_EBO
I_EBO
I_C=-50uA, I_C=0
V_CB=-20V, I_E=0
V_CE=-30V, I_C=0
V_EB=-4V, I_C=0
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
-
-
-0.1 μA
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* h_FE rank / O: 100~ 200, Y: 160~ 320
h_FE
V_CE(sat)
f_T
C_ob
V_CE=-3V, I_C=-0.1A
I_C=-500mA, I_B=-50mA
V_CE=-5V,I_C=-50mA,f=30Mhz
V_CB=-10V, I_E=0, f=1MHz
100
-
-
-
-
-0.2
150
20
320
-0.8
-
30
-
V
MHz
pF
Electrical Characteristics [Tr2]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=50 ㎂, I_E=0
I_C=1 ㎃, I_B=0
I_E=50 ㎂, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
DC current gain
h_FE^*
Collector-Emitter saturation voltage
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
V_EB=4V, I_C=0
V_CE=3V, I_C=0.1A
I_C=500 ㎃, I_B=50 ㎃
V_CE=5V, I_C=50 ㎃
V_CB=10V, I_E=0, f=1 ㎒
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
32
-
-
V
5
-
-
V
-
-
0.5
㎂
-
-
0.5
㎂
100
-
320
-
- 0.15 0.4
V
-
150
-
㎒
-
15
-
㎊
KSD-T5P005-001
2