SUT101N Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – Epitaxial planar PNP/NPN silicon transistor

SUT101N
Epitaxial planar PNP/NPN silicon transistor
Descriptions
• Complex type bipolar transistor
Features
• Reduce quantity of parts and mounting cost
• High collector power dissipation : P_C=500mW(Max.)
Package : SOT-26
Ordering Information
Type NO.
Marking
SUT101N
VX◇□
◇: Hfe rank, □ : Year & Week Code
Package Code
SOT-26
PIN Assignment & Description
6
5
4
Tr1
Tr2
1
2
3
[Pin Assignment]
Absolute Maximum Ratings
Characteristic
Pin
1
2
3
4
5
6
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C**
T_J
T_stg
** : Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P005-001
Description
Base(Tr 1)
Emitter(Tr 1/Tr 2)
Base(Tr 2)
Collector(Tr 2)
-
Collector(Tr 1)
Rating
Tr1 Tr2
-40
40
-32
32
-5
5
-1
1
-2
2
0.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
1