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SUN0550D Datasheet, PDF (2/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET
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Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SUN0550D
Rating
Max. 2.6
Max. 62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=500V, VGS=0V
VDS=400V, Tc=125C
VDS=0V, VGS=30V
VGS=10V, ID=2.25A
VDS=10V, ID=2.25A
VDS=25V, VGS=0V,
f=1.0MHz
VDD=250V, ID=4.5A,
RG=25Ω
VDS=400V, VGS=10V,
ID=4.5A
Min.
500
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
5
-
1
-
10
- 100
1.23 1.5
4.5
-
760
-
65
-
2
-
35
-
26
-
80
-
19
-
10.5 15
4
-
2
-
Unit
V
V
uA
uA
nA

S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ.
Source current (DC)
Source current (Pulsed)
IS
Integral reverse diode
-
-
ISM
in the MOSFET
-
-
Forward voltage
VSD
VGS=0V, IS=4.5A
-
-
Reverse recovery time (Note 3,4)
trr
Reverse recovery charge (Note 3,4)
Qrr
IS=4.5A, VGS=0V
dIF/dt=100A/us
-
330
- 1.15
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=25mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Max.
4.5
18
1.4
-
-
Unit
A
A
V
ns
uC
Rev. date: 27-AUG-13
KSD-T6O042-000
www.auk.co.kr
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