SUN0550D Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

SUN0550D
Advanced N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
 Low drain-source On resistance: R_DS(on)=1.23Ω (Typ.)
 Low gate charge: Q_g=10.5nC (Typ.)
 Low reverse transfer capacitance: C_rss=2pF (Typ.)
 Halogen free device and RoHS compliant device
 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN0550D
SUN0550
TO-252
D
G
S
TO-252
Marking Information
SUN
0550
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 27-AUG-13
KSD-T6O042-000
Rating
500
30
4.5
2.85
18
281
4.5
4.8
48
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
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