SUF1002 Datasheet, PDF (2/8 Pages) AUK corp – Dual N-channel Trench MOSFET

Thermal Characteristics (T_amb=25℃, Unless otherwise noted)
Characteristic
Symbol
Thermal resistance, junction to ambient ¹⁾
R_th(j-a)
SUF1002
Ratings
62.5
Unit
C/W
Electrical Characteristics (T_amb=25℃, Unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ⁵⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time ^{4, 5)}
Rise time ^{4, 5)}
Turn-off delay time ^{4, 5)}
Fall time ^{4, 5)}
Total gate charge ^{4, 5)}
Gate-source charge ^{4, 5)}
Gate-drain charge ^{4, 5)}
BV_DSS
V_GS(th)
I_DSS
I_GSS
R_DS(ON)
g_fs
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
I_D=250uA, V_GS=0
I_D=250uA, V_DS=V_GS
V_DS=30V, V_GS=0V
V_DS=0V, V_GS=20V
V_GS=10V, I_D=2.9A
V_GS=5V, I_D=2.9A
V_DS=5V, I_D=5.8A
V_GS=0V, V_DS=10V,
f=1MHz
V_DS=15V, I_D=5.8A,
R_G=10Ω
V_DS=15V, V_GS=5V
I_D=18A
Min. Typ. Max. Unit
30
-
-
V
1
-
3
V
-
-
1
uA
-
- 100 nA
-
24
30
-
28
34
m
-
12
-
S
-
370 560
-
60
90
pF
-
36
54
-
1.2
-
-
1.1
-
ns
-
2.5
-
-
1.1
-
-
4.2 6.3
-
0.9 1.4 nC
-
1.4 2.1
Source-Drain Diode Rating and Characteristics (T_amb=25℃, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Maximum diode forward current
Source current (Pulsed) ²⁾
Forward voltage ⁵⁾
Reverse recovery time
Reverse recovery charge
Is
Integral reverse diode
I_SM
in the MOSFET
V_SD
V_GS=0V, I_S=1A
t_rr
Q_rr
I_S=1.5A, di_s/d_t=100A/us
-
-
1.5
A
-
-
6
A
-
-
1
V
-
90
-
Ns
-
0.5
-
uC
* Note:
1) Device mounted on a glass-epoxy board
2) Repetitive rating: Pulse width limited by maximum junction temperature.
3) L=3.4mH, I_AS=5.8A, V_DD=15V, R_G=25
4) Pulse Test: Pulse width ≤ 300us, Duty cycle ≤ 2%.
5) Essentially independent of operating temperature
Rev. date: 29-OCT-13
KSD-T7F001-001
www.auk.co.kr
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