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| SUF1002 Datasheet, PDF (1/8 Pages) AUK corp – Dual N-channel Trench MOSFET | |||
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SUF1002
Dual N-ch Trench MOSFET
30V, 5.8A N-channel Trench MOSFET
Features
ï Low drain-source On-resistance:
RDS(on)=24m⦠@VGS=10V, ID=2.9A
ï Low gate charge: Qg=79.5nC (Typ.)
ï High power and current handing capability
ï Lead free product is acquired
Ordering Information
Part Number
Marking Code
Package
SOP-8
Packaging
SUF1002
SUF1002
SOP-8
Tape & Reel
Marking and Pin Assignment
SUF1002
YWW
Column 1: Device Code
Column 2: Production Information
- YWW: Year & Week Code
Absolute Maximum Ratings (Tamb=25â, Unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC)
ID
Drain current (Pulsed) *
IDP
Total power dissipation 1)
PD
Avalanche current (Single) 3)
IAS
Single pulsed avalanche energy 3)
EAS
Avalanche current (Repetitive) 2)
IAR
Repetitive avalanche energy 2)
EAR
Operating junction temperature
Tj
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rev. date: 29-OCT-13
KSD-T7F001-001
Ratings
Unit
30
V
ï±20
V
5.8
A
23.2
A
3
W
5.8
A
72
mJ
5.8
A
3.4
mJ
150
ï°C
-55 ~ 150
ï°C
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