STD1766 Datasheet, PDF (2/5 Pages) AUK corp – NPN Silicon Transistor

Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=50 ㎂, I_E=0
I_C=1 ㎃, I_B=0
I_E=50 ㎂, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE*
V_CE=3V, I_C=0.5A
Collector-Emitter saturation voltage
V_CE(sat) I_C=2A, I_B=200 ㎃
Transition frequency
f_T
V_CB=5V, I_C=500 ㎃
Collector output capacitance
C_ob
* : h_FE rank / O : 100~200, Y : 160~320
V_CB=10V, I_E=0, f=1 ㎒
STD1766
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
32
-
-
V
5
-
-
-
-
-
-
V
1
㎂
1
㎂
100
-
320
-
-
0.5 0.8
V
-
100
-
㎒
-
30
-
㎊
KSD-T5B004-003
2