STD1766 Datasheet, PDF (1/5 Pages) AUK corp – NPN Silicon Transistor

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STD1766
NPN Silicon Transistor
Descriptions
• Medium power amplifier
PIN Connection
Features
• P_C(Collector power dissipation)=2W
(Ceramic substrate of 250 ㎟×0.8t used)
• Low collector saturation voltage :
V_CE(sat)=0.5V(Typ.)
• Complementary pair with STB1188
• “Green” device and RoHS compliant device
• Available in full lead (Pb)-free device
SOT-89
Ordering Information
Type NO.
Marking
Package Code
STD1766
B2
□YWW
SOT-89
B2: DEVICE CODE, □ : h_FE rank, YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
P_C**
T_J
T_stg
Ratings
40
32
5
2
4
0.5
1
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Characteristic
Symbol
Thermal resistance Junction-ambient
R_th(J-A)
R_th(J-A) ^**
* : Single pulse, tp= 300 ㎲
** : When mounted on ceramic substrate(250 ㎟×0.8t)
KSD-T5B004-003
Typ.
-
-
Max
250.0
125.0
Unit
℃/W
1