STC5551F Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE ¹⁾
V_CE(sat)(1) ²⁾
V_CE(sat)(2) ²⁾
V_BE(sat)(1) ²⁾
V_BE(sat)(2) ²⁾
f_T
C_ob
I_C=100μA, I_E=0
I_C=1 ㎃, I_B=0
I_E=10 ㎂, I_C=0
V_CB=120V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=10 ㎃
I_C=10 ㎃, I_B=1 ㎃
I_C=50 ㎃, I_B=5 ㎃
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CE=10V, I_C=10 ㎃
V_CB=10V, I_E=0, f=1 ㎒
* Note 1) hFE Rank / A : 80~150, B : 130~250
* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
STC5551F
(Ta=25°C)
Min. Typ. Max. Unit
180
-
-
V
160
-
-
V
6
-
-
V
-
-
0.1
㎂
-
-
0.1
㎂
80
-
250
-
-
-
0.2
V
-
-
0.5
V
-
-
1
V
-
-
100
-
-
6
1
V
400 ㎒
-
㎊
KSD-T5B012-003
2