STC5551F Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC5551F
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
PIN Connection
Features
• High collector breakdown voltage
: V_CBO = 180V, V_CEO = 160V
• Low collector saturation voltage
: V_CE(sat)=0.5V(MAX.)
Ordering Information
Type No.
Marking
Package Code
STC5551F
N51
□YWW
SOT-89
N51: DEVICE CODE, □ : h_FE rank, YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
** : When mounted on ceramic substrate(250 ㎟×0.8t)
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
P_C^**
T_J
T_stg
Ratings
180
160
6
0.6
1.2
0.5
1
150
-55~150
SOT-89
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T5B012-003
1