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STB1188 Datasheet, PDF (2/5 Pages) AUK corp – PNP Silicon Transistor
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=-50 ㎂, IE=0
Collector-Emitter breakdown voltage BVCEO IC=-1 ㎃, IB=0
Emitter-Base breakdown voltage
BVEBO IE=-50 ㎂, IC=0
Collector cut-off current
ICBO
VCB=-20V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
hFE*
VCE=-3V, IC=-0.1A
Collector-Emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
* : hFE rank / O : 100~200, Y : 160~320
IC=-2A, IB=-200 ㎃
VCB=-5V, IC=-500 ㎃,
f=30 ㎒
VCB=-10V, IE=0, f=1 ㎒
STB1188
(Ta=25C)
Min. Typ. Max. Unit
-40
-
-
V
-32
-
-
V
-5
-
-
V
-
-
-1
㎂
-
-
-1
㎂
100
-
320
-
-
-0.5 -0.8
V
-
150
-
㎒
-
50
-
㎊
KSD-T5B022-002
2