STB1188 Datasheet, PDF (1/5 Pages) AUK corp – PNP Silicon Transistor

STB1188
PNP Silicon Transistor
Description
 Medium power amplifier
PIN Connection
Features
 P_C (Collector power dissipation)=1W
(Ceramic substrate of 250 ㎟×0.8t used)
 Low collector saturation voltage : V_CE(sat)=-0.5V (Typ.)
 Complementary pair with STD1766
SOT-89
Ordering Information
Type NO.
Marking
STB1188
B1
YWW
B1: Device code, YWW (Y : Year code, WW : Week code)
Package Code
SOT-89
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
P_C
Collector power dissipation
P_C*
Junction temperature
T_J
Storage temperature
T_stg
Operating temperature range
T_opr
* _{: When mounted on ceramic substrate (250 ㎟×0.8t)}
Ratings
-40
-32
-5
-2
0.5
1
150
-55~150
-40~125
(Ta=25C)
Unit
V
V
V
A
W
C
C
C
KSD-T5B022-002
1