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STB1017PI Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor
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STB1017PI
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector cut-off current
ICBO
VCB=-80V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
Collector-Emitter breakdown voltage V(BR)CEO IC=-50mA, IB=0
DC current gain
VCE=-5V, IC=-0.5A
hFE
VCE=-5V, IC=-3A
Collector-Emitter saturation voltage VCE(sat) IC=-3A, IB=-0.3A
Base-Emitter saturation voltage
VBE(on) VCE=-5V, IB=-3A
Transition frequency
fT
VCB=-5V, IC=-0.5A
Collector output capacitance
* hFE rank : 120~240 Only
Cob
VCB=-10V, IE=0, f=1MHz
Min. Typ. Max. Unit
-
-
-10
μA
-
-
-10
μA
-80
-
-
V
120
-
240
-
40
-
-
-
-
-1.0 -1.7
V
-
-1.0 -1.5
V
-
9
-
MHz
-
60
-
pF
KSD-T0O110-000
2
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