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STB1017PI Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor | |||
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Features
⢠Low saturation switching application
⢠Power amplifier
⢠High Voltage : VCEO=-80V Min.
⢠Complement to STD1408PI
STB1017PI
PNP Silicon Transistor
PIN Connection
Ordering Information
Type NO.
Marking
STB1017PI
STB1017
1
2
3
Package Code
TO-220F-3L
TO-220F-3L
Marking Diagram
AAUUKK
â³YMDD
SÎTBY1M0D1D7
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
- â³ : Factory Management Code
- YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation (Tc=25â)
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ã²
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
Tj
Tstg
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
KSD-T0O110-000
Rating
-80
-80
-5
-4
-8
15
150
-55~150
Unit
V
V
V
A
A(Pulse)
W
°C
°C
Typ.
-
-
Max
8.33
62.5
Unit
â/W
1
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