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| SGTN50A36FD Datasheet, PDF (2/4 Pages) KODENSHI KOREA CORP. – lnsulated Gate Bipolar Transistor | |||
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Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SGTN50A36FD
Rating
Max. 4.16
Max. 62.5
Unit
ï°C/W
Electrical Characteristics (TA=25ï°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Off-Characteristics
Collector-emitter breakdown voltage
Breakdown voltage temperature
coefficient
Zero gate voltage collector current
Gate-body leakage current
On-Characteristics
BVCES
â³BVCES
/â³TJ
ICES
IGSS
IC=500uA, VGS=0
IC=1mA, reference to 25ï°C
VCE=360V, VGS=0V, TC=25ï°C
VDS=0V, VGS=ï±30V
Gate threshold voltage
Collector-emitter saturation voltage
Dynamic-Characteristics
VGE(th)
VCE(sat)
VCE=VGE, IC=250uA
VGE=15V, IC=35A
VGE=15V, IC=50A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (3),(4)
Rise time (3),(4)
Turn-off delay time (3),(4)
Fall time (3),(4)
Total gate charge (3),(4)
Gate-emitter charge (3),(4)
Gate-collector charge (3),(4)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Qg
Qge
Qgs
VCE=25V, VGE=0V,
f=1MHz
VCE=200V, IC=35A,
RG=5â¦
VCE=150V, VGE=15V,
IC=35A
Min. Typ. Max.
360
-
-
-
0.5
-
-
-
10
-
- ï±400
2
-
4.5
-
1.4 1.6
-
1.6 1.8
- 1500 -
-
100
-
-
50
-
-
30
-
-
100
-
-
100
-
-
150
-
-
67
-
- 11.7 -
- 23.5 -
Unit
V
V/ï°C
uA
nA
V
V
V
pF
ns
nC
3) Pulse test: Pulse widthâ¤300us, Duty cycleâ¤2%
4) Essentially independent of operating temperature typical characteristics
Rev. date: 28-NOV-13
Preliminary
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