SGTN50A36FD Datasheet, PDF (1/4 Pages) KODENSHI KOREA CORP. – lnsulated Gate Bipolar Transistor

SGTN50A36FD
Insulated Gate Bipolar Transistor, IGBT
360V, 50A High Speed Punch Through IGBT
Features
 Low gate charge
 Punch Through Technology
 Low saturation voltage:
V_CE(sat) = 1.6V (@ IC = 50A, TC = 25C)
 RoHS compliant product
Applications
 General purpose inverters
 PDP
 UPS
Ordering Information
GCE
TO-220F-3L
Part Number
SGTN50A36FD
Marking
N50A36
Package
TO-220F
AU_AK_UK
△_ΔYM_YD_MD_DD
N50A36
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Collector-emitter voltage
Continuous collector current ⁽¹⁾
Pulsed collector current ⁽²⁾
Gate-emitter voltage
Turn-off safe area
Power dissipation
Operating and storage temperature range
Maximum lead temperature for soldering purpose
V_CES
I_C
T_c=25C
T_c=100C
I_CM
V_GES
-
P_D
T_J, T_stg
T_L
1) _{Collector current limited by maximum junction temperature}
2) _{Pulse width limited by maximum junction temperature and turn-off within RBSOA.}
Rating
360
100
50
240
30
200
30
-55 to 150
300
Unit
V
A
A
A
V
A
W
C
C
Rev. date: 28-NOV-13
Preliminary
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