2N5401 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_C=-100μA, I_E=0
I_C=-1mA, I_B=0
I_E=-10μA, I_C=0
V_CB=-120V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_{FE (1)}
V_EB=-3V, I_C=0
V_CE=-5V, I_C=-1mA
DC current gain
h_{FE (2)}
V_CE=-5V, I_C=-10mA
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
h_{FE (3)}
V_CE=-5V, I_C=-50mA
V_CE(sat)(1)^* I_C=-10mA, I_B=-1mA
V_CE(sat)(2)^* I_C=-50mA, I_B=-5mA
V_BE(sat)(1)^* I_C=-10mA, I_B=-1mA
Base-Emitter saturation voltage
V_BE(sat)(2)* I_C=-50mA, I_B=-5mA
Transition frequency
f_T
V_CE=-10V, I_C=-10mA
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
-160 -
-
V
-160 -
-
V
-5
-
-
V
-
-
-100 nA
-
-
-100 nA
50
-
-
60
-
240
-
50
-
-
-
-
-0.2
V
-
-
-0.5
V
-
-
-1
V
-
-
-1
V
100
-
400 MHz
-
-
6
pF
KSD-T0A076-000
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