2N5401 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
PNP Silicon Transistor
Description
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage :
V_CBO = -160V, V_CEO = -160V
• Low collector saturation voltage :
V_CE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
Ordering Information
Type NO.
2N5401
Marking
2N5401□
□ : Year & Week Code
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
V_CEO
V_EBO
I_C
P_C
Junction temperature
T_j
Storage temperature
T_stg
PIN Connection
E
B
E
B
C
C
TO-92
Package Code
TO-92
Ratings
-160
-160
-5
-600
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
KSD-T0A076-000
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