1S2076A Datasheet, PDF (3/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

RATINGS AND CHARACTERISTIC CURVES
1S2076A
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
D.U.T.
60
VRF=2V
2nF 5K
VO
1.1
1.0
Ctot(VR)
Ctot(OV)
0.9
TJ=25
f=1MHz
0.8
0.7
0
2
4
6
8
10V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
nA
10 ⁴
10 ³
10 ²
10
1
0
VR=20V
100
200
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
10 ⁴
10 ³
rF
10 ²
10
TJ=25
f=1KHz
1
10 ^-2
10 ^-1
1
10
IF
10² mA
Document Number 0268032
KI SEMICONDUCTOR
3.