1S2076A Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

KI SEMICONDUCTOR
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
1S2076A
REVERSE VOLTAGE : 60 V
CURRENT: 0.15 A
DO-35(GLASS)
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at ₂₅ am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectification w ith resist.load
I_AV
@^T_A⁼25 ^{and f 50Hz}
Forw ard surge current @ t<1s and T_J=₂₅
I_FSM
Pow er dissipation
@ T_A=₂₅
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage at I_F=10mA
Leakage current
V_F
-
1S2076A
60
70
150
1.0
250¹⁾
175
-55 --- +175
TYP
-
@ V_R=30V
IR
-
-
Capacitance @ V_{F=VR=1V,f=1MHz}
CJ
-
-
Reverse recovery time
f rom I_{F=IR=10mA to Irr=1mA}
t_rr
-
-
Document Number 0268032
KI SEMICONDUCTOR
UNITS
V
V
mA
A
mW
MAX
0.8
0.1
U N ITS
V
μA
3.0
pF
8.0
ns
1.