AO6601 Datasheet, PDF (7/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
Complementary Trench MOSFET
AO6601 (KO6601)
■ P-Channel Mosfet Typical Characterisitics
10
V_DS=-15V
I_D=-2.3A
8
6
500
400
C_iss
300
4
2
0
0
1
2
3
4
5
6
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
10µs
100µs
1ms
0.1
DC
T_J(Max)=150°C
T_A=25°C
10ms
10s
0.0
0.01
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
200
C_oss
100
C_rss
0
0
5
10
15
20
25
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
T_A=25°C
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 _{RθJA=150°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
P_D
T_on
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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