AO6601 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

SMD Type
Complementary Trench MOSFET
AO6601 (KO6601)
MOSFET
■ Features
N-Channel :
● VDS (V) = 30V
● ID = 3.4 A (VGS = 10V)
● RDS(ON) ＜ 60mΩ (VGS = 10V)
● RDS(ON) ＜ 70mΩ (VGS = 4.5V)
● RDS(ON) ＜ 90mΩ (VGS = 2.5V)
P-Channel :
● VDS (V) = -30V
● ID = -2.3 A (VGS = 10V)
● RDS(ON) ＜ 115mΩ (VGS = -10V)
● RDS(ON) ＜ 150mΩ (VGS = -4.5V)
● RDS(ON) ＜ 200mΩ (VGS = -2.5V)
D1
D2
( _SOT-23-6 )
0.4^+0.1
-0.1
6
5
4
1
2
3
+0.01
-0.01
+0.2
-0.1
Unit: mm
0.15 +0.02
-0.02
1 G1 4 D2
2 S2 5 S1
3 G2 6 D1
G1
G2
S1
S2
N-channel
P-channel
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
N-Channel
P-Channel
30
-30
±12
3.4
-2.3
2.7
-1.8
20
-15
1.15
0.73
110
150
80
150
-55 to 150
Unit
V
A
W
℃/W
℃
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