SI9435DY Datasheet, PDF (4/4 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI9435DY
■ Typical Characterisitics
10
ID = -5.3A
8
6
VDS = -5V
-15V
-10V
1000
800
CISS
600
f = 1 MHz
VGS = 0 V
4
400
COSS
2
200
CRSS
0
0
0
5
10
15
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
1
100 s
1ms
10ms
100ms
1s
10s
DC
VGS = -10V
0.1 ^{SINGLE PULSE}
R JA = 125^oC/W
TA = 25^oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
R JA = 125°C/W
TA = 25°C
0.1
1
t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R JA(t) = r(t) + R JA
R JA = 125^oC/W
P(pk)
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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