SI9435DY Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI9435DY
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=-250μA, VGS=0V
-30
V
IDSS
VDS=-24V, VGS=0V
-1 μA
IGSS
VDS=0V, VGS=±20V
±100 nA
VGS(th) VDS=VGS ID=-250μA
-1
-3
V
VGS=-10V, ID=-5.3A (Note.1)
50
RDS(On) VGS=-10V, ID=-5.3A ,TJ=125℃ (Note.1)
79 mΩ
VGS=-4.5V, ID=-4.2A (Note.1)
80
ID(ON) VGS=-10V, VDS=-5V (Note.1)
-20
A
gFS
VDS=-15V, ID=-5.3A (Note.1)
12
S
Ciss
690
Coss
VGS=0V, VDS=-15V, f=1MHz
306
pF
Crss
77
Qg
14 23
Qgs
VGS=-15V, VDS=-10V, ID=-5.3A
2.4
nC
Qgd
4.8
td(on)
7 14
tr
td(off)
VGS=-10V, VDS=-15V, ID=-1A,RG=6Ω
10 18
ns
19 34
tf
11 20
IS
-5.3 A
VSD
IS=-5.3A,VGS=0V (Note.1)
-1.2 V
Note.1: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
■ Marking
Marking
9435
KC****
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