SI7898DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

SMD Type
MOSFET
■ Typical Characterisitics
1.0
N-Channel MOSFET
SI7898DP (KI7898DP)
200
0.5
160
I_D = 250µA
0.0
120
- 0.5
80
- 1.0
40
- 1.5
- 50 - 25
100
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by
R _{DS (on)}
10 µs
100
1
1 ms
10 ms
0.1
0.01
0.01
2
T _C = 25 °C
Single Pulse
100 ms
1s
10 s
.
100 s, DC
0.1
1
10
100 1000
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
1
Duty Cycle = 0.5
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
P _DM
t₁
1.
Duty
t₂
Cycle,
D
=
t₁
t₂
2. Per Unit Base = R _thJA= 65°C/W
Single Pulse
3. T_JM - T_A= P_DM Z_thJA(t)
4. Surface Mounted
0.01
10^-4
10^-3
10^-2
10^-1
1
10
100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Im pedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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