SI7898DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

SMD Type
N-Channel MOSFET
SI7898DP (KI7898DP)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Continuous Source Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=150V, VGS=0V
VDS=150V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=3.5A (Note.1)
VGS=6V, ID=3A (Note.1)
VGS=10V, VDS=5V (Note.1)
VDS=15V, ID=5A (Note.1)
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=75V, ID=3.5A
VDD = 75 V, RL = 21 Ω
ID ≅ 3.5 A, VGEN = 10 V, Rg = 6 Ω
IF= 2.5A, dI/dt= 100A/μs
IS=2.5A,VGS=0V
Note.1:Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
MOSFET
Min Typ Max Unit
150
V
1
μA
5
±100 nA
2
4
V
87
mΩ
98
25
A
15
S
0.5
2.5 Ω
21
3.2
nC
6
14
15
35 ns
25
70
2.5 A
1.2 V
■ Typical Characterisitics
25
V _GS = 10 V thru 6 V
20
15
5V
10
5
3, 4 V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2 _{www.kexin.com.cn}
25
20
15
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics