SI4463BDY-HF Datasheet, PDF (4/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI4463BDY-HF (KI4463BDY-HF)
■ Typical Characterisitics
Source-Drain Diode Forward V oltage
50
T _J = 150 C
10
On-Resistance vs. Gate-to-Source
0.05
I_D = 5 A
Voltage
0.04
0.03
I_D = 13.7 A
T _J = 25 C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Threshold V oltage
0.6
0.4
I_D = 250 A
0.2
0.00
012345678
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
50
40
30
0.0
20
−0.2
−0.4
−50 −25
100
r_DS(on) Limited
10
.
0 25 50 75 100 125 150
T_J − Temperature ( C)
Safe Operating Area
I_DM Limited
P(t) = 0.001
I_D(on)
1 ^Limited
P(t) = 0.01
P(t) = 0.1
0.1
T _C = 25 C
Single Pulse
P(t) = 1
P(t) = 10
dc
BV _DSS Limited
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
10
0
0.01
0.1
1
10
Time (sec)
100
600
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