SI4463BDY-HF Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI4463BDY-HF (KI4463BDY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
On state drain current
Forward Transconductance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=70℃
VDS=0V, VGS=±12V
VDS=VGS ID=-250μA
VGS=-10V, ID=-13.7A
VGS=-4.5V, ID=-12.3A
VGS=-2.5V, ID=-5A
VGS=-5V, VDS=-4.5V (Note.1)
VDS=-10V, ID=-13.7A (Note.1)
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-13.7A
VDD = −10 V, RL = 10 Ω
ID=−1 A, VGEN = −4.5 V, Rg = 6 Ω
IF=-2.3A, dI/dt=100A/μs
IS=-2.7A,VGS=0V (Note.1)
Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.
Min Typ Max Unit
-20
V
-1
uA
-10
±100 nA
-0.6
-1.4 V
11
14 mΩ
20
-30
A
44
S
2.7
Ω
37 56
8.7
nC
11
55
90
170 ns
115
75
-2.7 A
-1.1 V
■ Marking
Marking
4463B
KC**** F
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