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SI4410DY-HF Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET
SMD Type
MOSFET
N-Channel MOSFET
SI4410DY-HF (KI4410DY-HF)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.10
T J = 150 C
10
T J = 25 C
0.08
0.06
0.04
0.02
ID = 10 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold V oltage
0.6
0.00
0
80
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.4
0.2
60
- 0.0
ID = 250 A
- 0.2
40
- 0.4
- 0.6
20
- 0.8
- 1.0
- 50 - 25 0
.
25 50 75 100 125 150
0
0.01
0.10
1.00
TJ - Temperature ( C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
4 www.kexin.com.cn
10 -2
10 -1
Square Wave Pulse Duration (sec)
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA= 50 C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
1
10
30