SI4410DY-HF Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
SI4410DY-HF (KI4410DY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Gate Resistance
Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Rg
Qg
Qgt
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=10A (Note.1)
VGS=4.5V, ID=5A (Note.1)
VGS=5V, VDS=10V (Note.1)
VDS=15V, ID=5A (Note.1)
VGS=0V, VDS=0V, f=1MHz
VDS = 15 V, VGS = 5 V, ID = 10 A
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=25V,ID=1A
RL=25Ω,RGEN=6Ω
IF= 2.3A, dI/dt= 100A/μs
IS=2.3A,VGS=0V (Note.1)
Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.
MOSFET
Min Typ Max Unit
30
V
1
uA
25
±100 nA
1
3
V
13.5
mΩ
20
20
A
38
S
0.5
2.6 Ω
20 34
37 60
nC
7
7
30
20
100 ns
80
80
2.3 A
1.1 V
■ Marking
Marking
4410
KC**** F
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