AP2322GN-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Capable of 1.8V gate drive, Simple Drive Requirement

SMD Type
MOSFET
N-Channel MOSFET
AP2322GN-HF (KP2322GN-HF)
■ Typical Characterisitics
12
1000
I _D =2.2A
10
8
V _DS =8V
V _DS =12V
V _DS =16V
f=1.0MHz
C _iss
6
100
C _oss
4
C _rss
2
0
0
4
8
12
16
Q _G , Total Gate Charge (nC)
100
10
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V_. )
Fig 9. Maximum Safe Operating Area
10
V _DS =5V
8
T _j =25 ^o C
6
T _j =150 ^o C
4
10
1
5
9
13
17
21
25
V _DS , Drain-to-Source Voltage (V)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 360℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
2
0
0
1
2
3
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Charge
Q
Fig 12. Gate Charge Circuit
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