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AP2322GN-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 1.8V gate drive, Simple Drive Requirement | |||
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SMD Type
N-Channel MOSFET
AP2322GN-HF (KP2322GN-HF)
â Features
â VDS (V) = 20V
â ID = 2.5 A
â RDS(ON) ï¼ 90mΩ (VGS = 4.5V)
â RDS(ON) ï¼ 120mΩ (VGS = 2.5V)
â RDS(ON) ï¼ 150mΩ (VGS = 1.8V)
â PbâFree Package May be Available. The GâSuffix Denotes a
PbâFree Lead Finish
D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
G
S
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
TA=25â
TA=70â
TA=25â
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
20
±8
2.5
2
10
0.833
0.006
150
150
-55 to 150
Unit
V
A
W
W/â
â/W
â
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