2SJ506S Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Hight Speed Power Switching

SMD Type
■ Typical Characterisitics
P-Channel MOSFET
2SJ506S
Reverse Drain Current vs.
Source to Drain Voltage
–20
Pulse Test
–5 V
–16
–10 V
–12
V_GS = 0.5 V
–8
–4
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V _SD (V)
MOSFET
Normalized Transient Thermal Impedance vs. Pulse Width
3
1 ^D=1
0.5
Tc = 25ϒC
0.3
0.1
0.03
0.2
0.1
0.05
0.02
0.01
1
shot
Pulse
0.01
10 ∝
100 ∝
.
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 6.25 ϒC/W, Tc = 25 ϒC}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
4 _{www.kexin.com.cn}