2SJ506S Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Hight Speed Power Switching

SMD Type
MOSFET
P-Channel MOSFET
2SJ506S
TO-252
Unit: mm
■ Features
● VDS (V) =-30V
D
● ID =-10 A
● RDS(ON) ＜ 85mΩ (VGS =-10V)
● RDS(ON) ＜ 180Ω (VGS =-4V)
G
6.50+0.15
-0.15
5.30+0.2
-0.2
4
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
0.60+ 0.1
- 0.1
1 Gate
4 .60 +0.15
-0.15
2 Drain
3 Source
S
4 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current （Note.1)
Body to Drain Diode Reverse Drain Current
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-30
V
VGS
±20
ID
-10
IDM
-40
A
IDR
-10
PD
20
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 us, duty cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Diode Forward Voltage
Symbol
VDSS
VGSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
trr
VSD
Test Conditions
ID=-10mA, VGS=0V
IG=±100uA, VDS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±16V
VGS=-10V ID=-1mA
VGS=-10V, ID=-5A
VGS=-4V, ID=-5A
VDS=-10V, ID=-5A
VGS=0V, VDS=-10V, f=1MHz
VGS=-10V, ID=-5A, RL=2Ω
IF=-10A, dI/dt=50A/μs,VGS=0
IS=-10A,VGS=0V
Min Typ Max Unit
-30
V
±20
-10 uA
±10 uA
-1
-2
V
85
mΩ
180
10 16
S
660
440
pF
140
12
65
85
ns
65
65
-1.05
V
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