 English |
|
|
|
|
|
|
|
| NDT6N70P Datasheet, PDF (3/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET | |||
| |||
| ◁ |
DIP Type
MOSFET
N-Channel Enhancement MOSFET
NDT6N70P
â Typical Characterisitics
Top :
VGS
15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
â» Notes :
10-1
1. 250μ s Pulse Test
2. TC = 25â
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characte irstics
4.5
4.0
3.5
3.0
VGS = 10V
2.5
2.0
VGS = 20V
1.5
1.0
â» Note : TJ = 25â
0.5
0
5
10
15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1400
1200
1000
800
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
600
400
Crss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
â» Note : ID = 6A
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.kexin.com.cn 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese