NDT6N70P Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

DIP Type
MOSFET
N-Channel Enhancement MOSFET
NDT6N70P
■ Features
● VDS (V) = 700V
● ID = 4.8A (VGS = 10V)
● RDS(ON) ＜ 1.8Ω (VGS = 10V)
● Low gate charge ( typical 16nC)
D
G
S
TO-251
1 23
123
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Tc=100℃
Pulsed Drain Current (Note.1)
Avalanche Current
(Note.1)
Repetitive Avalanche Energy (Note.1)
Single Pulsed Avalanche Energy (Note.2)
Power Dissipation
Tc=25℃
Derate above 25℃
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAR
EAS
PD
dv/dt
RthJA
RthJC
RthJS
TL
TJ
Tstg
Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature
Note.2: L=8mH,IAS=6.0A,VDD=50V,RG=25Ω,Starting TJ=25℃
Note.3; ISD≤4.8A,di/dt≤200A/us,VDD≤BVDSS,Starting TJ=25℃
Rating
700
±30
4.8
3.0
20
4.8
9.5
150
95
0.76
4.5
110
1.3
50
300
150
-55 to 150
Unit
V
A
mJ
W
W/℃
V/ns
℃/W
℃
www.kexin.com.cn ¹