MMBT5089_15 Datasheet, PDF (3/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBT5089 (KMBT5089)
■ Typical Characterisitics
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
= 10
1
10
100
I _C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
V_CB = 45V
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 °C
25 °C
125 °C
V _CE = 5.0 V
1
10
40
I _C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
5
f = 1.0 MHz
4
1
0.1
25
50
75
100
125
150
T_A - AMBIE NT TEMP ERATURE (_°C)
3
C _te
2
1
C _ob
0
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
Normalized Collector-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
50
75
100
125
150
T_A - AMBIE NT TEMPERATURE ( _°C)
Wideband Noise Frequency
vs Source Resistance
5
V _CE = 5.0 V
4
BANDWIDTH = 15.7 kHz
3
I _C = 100 A
2
I _C = 30 A
1
0
1,000
I _C = 10 A
2,000
5,000 10,000 20,000
50,000 100,000
R _S - SOURCE RESISTANCE ( )
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