MMBT5089_15 Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBT5089 (KMBT5089)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter On Voltage
DC current gain
Small-Signal Current Gain
Noise Figure
Collector-Base Capacitance
Emitter-Base Capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 15 V , IE= 0
IEBO
VEB= 3V , IC=0
VEB= 4.5V , IC=0
VCE(sat) IC=10 mA, IB=1mA
VBE(sat) IC=10 mA, IB=1mA
VBE(on) VCE= 5V, IC= 10mA
hFE(1) VCE= 5V, IC= 0.1mA
hFE(2) VCE= 5V, IC= 1mA
hFE(3) VCE= 5V, IC= 10mA
hfe IC = 1mA, VCE = 5V,f = 1kHz
NF
IC = 100 μA, VCE = 5.0 V,
RS = 10 kΩ, f = 10 Hz to 15.7 kHz
Ccb VCB= 5V, IE= 0,f=100KHz
Ceb VBE= 0.5V, IC= 0,f=100KHz
fT
VCE= 5V, IC= 0.5mA,f=20MHz
Min Typ Max Unit
30
25
V
5
50
50 nA
100
0.5
1.2 V
0.8
400
1200
450
400
450
1800
2 dB
4
pF
10
50
MHz
■ Marking
Marking
1R
■ Typical Characterisitics
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 °C
V _CE = 5.0 V
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03 0.1 0.3 1 3 10 30 100
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
= 10
0.2
0.15
0.1
0.05
25 °C
125 °C
- 40 °C
0.1
1
10
100
I _C - COLLECTOR CURRENT (mA)
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