KX4N03W Datasheet, PDF (3/6 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
MOSFET
Dual N-Channel MOSFET
KX4N03W
■ Typical Characterisitics
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
00
25 50 75 100 125 150
TA - Ambient Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2
Single Pulse
1.8
2unit
Mounted on Ceramic
Board of 50 cm² x1.1 mm
1.6
2unit:
1.4
PD (FET1) : PD (FET2) = 1 : 1
1.2
1
1unit
0.8
0.6
0.4
0.2
0
0
25 50 75 100 125 150
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
R(^D_@^S(oV^{n)GLSi=m1it0e}ID^dV(⁾DC)
ID(pulse)
1 _ms
10 _ms
PW=100 _s
1
DC_(1unit)
DC₍¹₂⁰_un⁰_it)^ms
0.1
Single Pulse Mounted on Ceramic
Board of 50 cm²x1.1 mm
0.01 ^{PD (FET1) : PD (FET2) = 1 : 1}
0.1
1.0
10.0
VDS - Drain to Source Voltage - V
100.0
FORWARD TRANSFER CHARACTERISTICS
100 _{VDS = 10 V}
10
1
TA = 125˚C
0.1
25˚C
0.01
0.001
75˚C
25˚C
0.0001
0.00001
0
1
2
3
4
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
16
4.5 V
12
8
VGS = 10 V
4
4.0 V
0
0
0.2
0.4
0.6
0.8
1.0
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3 _{VDS = 10 V}
ID = 1 mA
2.5
2
1.5
1
50
0
50
100
150
Tch - Channel Temperature - ˚C
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