KX4N03W Datasheet, PDF (1/6 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
Dual N-Channel MOSFET
KX4N03W
MOSFET
■ Features
● ^{Low Ciss Ciss = 580 pF TYP.}
● Built-in G-S protection diode against ESD
● Low on-state resistance
RDS(on)1 = 67.0 m
RDS(on)2 = 86.0 m
RDS(on)3 = 95.0 m
MAX. (VGS = 10 V, ID = 2.0 A)
MAX. (VGS = 4.5 V, ID = 2.0 A)
MAX. (VGS = 4.0 V, ID = 2.0 A)
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
TSSOP-8
6.45
+0.1
-0.1
4.45
+0.1
-0.1
Unit: mm
8
5
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1
4
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
±20
Continuous Drain Current
Tc=25℃
ID
±3.8
A
Pulsed Drain Current (Note.1)
IDM
±15.2
Power Dissipation
(Note.1)
TA=25℃
PD
1
W
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 μs, Duty Cycle ≤ 1%
■ Marking
Marking
4N03
KA***
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