CR08AS Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

SMD Type
Thyristor
CR08AS
GATE CHARACTERISTICS
10₇²
5
3
2
10₇¹
VFGM = 6V
5
PGM = 0.5W
3
PG(AV) = 0.1W
2
10₇⁰
5
3
VGT = 0.8V
IGT = 100µA
(Tj = 25°C)
2
10^–₇¹
5
3
2
VGD = 0.2V
IFGM = 0.3A
10^–2_{10–22 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3}
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7 TYPICAL EXAMPLE
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10–⁰_{40 –20 0 20 40 60 80 100 120 140 160}
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0.9
DISTRIBUTION
0.8
TYPICAL EXAMPLE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0–40 _{–20 0 20 40 60 80 100 120}
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10^{3100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103}
7 25 25 t0.7
5 _{ALUMINUM BOARD}
3 _{WITH SOLDERING}
2
10²
7
5
3
2
10¹
7
5
3
2
101⁰_{0–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100}
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
0.2
00
θ
360°
RESISTIVE, INDUCTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
140 ^{ALUMINUM BOARD}
WITH SOLDERING
120
θ
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60
CONVECTION
θ = 30° 90° 180°
40
60° 120°
20
00 _{0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6}
AVERAGE ON-STATE CURRENT (A)
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