CR08AS Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

SMD Type
Thyristor
Low Power Use
Non-Insulated Type,Glass Passivation Type
CR08AS
Features
IT(AV) :0.8A
VDRM :400V/600V
IGT :100 A
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage *1
DC off-state voltage *1
RMS on-state current
Average on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
*1 With Gate-to-cathode resistance RGK=1k
1.70 0.1
0.42 0.1
0.46 0.1
1.GATE
2.ANODE
3.CATHODE
Symbol CR08AS-8 CR08AS-12 Unit
VRRM
400
600
V
VRSM
500
720
V
VR(DC)
320
480
V
VDRM
400
600
V
VD(DC)
320
480
V
IT(RMS)
1.26
A
IT(AV)
0.8
A
ITSM
I²t
PGM
10
A
0.42
A²s
0.5
W
PG(AV)
0.1
W
VFGM
6
V
VRGM
6
V
IFGM
0.3
A
Tj
-40 to +125
Tstg
-40 to +125
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