AO6604 Datasheet, PDF (3/7 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
Complementary Trench MOSFET
AO6604 (KO6604)
■ P-Channel Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
VDSS ID=-250μA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55℃
Gate-Body leakage current
IGSS VDS=0V, VGS=±8V
Gate Threshold Voltage
VGS(th) VDS=VGS ID=-250μA
VGS=-4.5V, ID=-2.5A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.5A TJ=125℃
RDS(On)
VGS=-2.5V, ID=-2A
VGS=-1.8V, ID=-1A
On state drain current
ID(ON) VGS=-4.5V, VDS=-5V
Forward Transconductance
gFS VDS=-5V, ID=-2.5A
Input Capacitance
Ciss
Output Capacitance
Coss VGS=0V, VDS=-10V, f=1MHz
Reverse Transfer Capacitance
Crss
Gate resistance
Rg VGS=0V, VDS=0V, f=1MHz
Total Gate Charge (4.5V)
Qg
Gate Source Charge
Qgs VGS=-4.5V, VDS=-10V, ID=-2.5A
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VGS=-4.5V, VDS=-10V, RL=4Ω,RGEN=6Ω
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF=-2.5A, dI/dt=100A/μs
Qrr
Maximum Body-Diode Continuous Current IS
Diode Forward Voltage
VSD IS=-1A,VGS=0V
Min Typ Max Unit
-20
V
-1
μA
-5
±100 nA
-0.4 -0.65 -1 V
56 75
80 105
mΩ
70 95
85 115
-13
A
13
S
560 745
80
pF
70
15 23 Ω
8.5 11
1.2
nC
2.1
7.2
36
53
ns
56
37 49
27
nC
-1.5 A
-0.7 -1 V
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