AO6604 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

SMD Type
Complementary Trench MOSFET
AO6604 (KO6604)
MOSFET
■ Features
● N-Channel：VDS=20V ID=3.4A
RDS(ON) ＜ 65mΩ (VGS = 4.5V)
RDS(ON) ＜ 75mΩ (VGS = 2.5V)
RDS(ON) ＜ 100mΩ (VGS = 1.8V)
● P-Channel：VDS=-20V ID=-2.5A
RDS(ON) ＜ 75mΩ (VGS =-4.5V)
RDS(ON) ＜ 95mΩ (VGS =-2.5V)
RDS(ON) ＜ 115mΩ (VGS =-1.8V)
D1
D2
G1
G2
S1
S2
n-channel
p-channel
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t ≤ 10s
Steady-State
Thermal Resistance.Junction- to-Lead Steady-State
Junction Temperature
Storage Temperature Range
( _SOT-23-6 )
0.4^+0.1
-0.1
6
5
4
Unit: mm
1
2
3
+0.01
-0.01
+0.2
-0.1
0.15 +0.02
-0.02
1.Gate1
2.Source2
3.Gate2
4.Drain2
5.Source1
6.Drain1
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
N-Channel P-Channel
20
-20
±8
3.4
-2.5
2.5
-2
13
-13
1.1
0.7
110
150
80
150
-55 to 150
Unit
V
A
W
℃/W
℃
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