SI9926DY Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

SSMMDD Typpee
SI9926DY (KI9926DY)
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate-Body Leakage
Drain-Source On-State Resistance *
On-State Drain Current *
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
Symbol
Test conditions
VDSS VGS = 0 V, ID = 250 μA
IDSS VDS = 16V , VGS = 0V
VGS(th) VDS = VGS , ID = 250uA
IGSS VDS = 0V , VGS = ±8V
VGS = 4.5V , ID = 6.5A
RDS(on)
VGS = 2.5V , ID = 5.4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 5V , ID =3A
Ciss
Coss VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Crss
Qg
Qgs VDS = 10V , VGS = 4.5V , ID = 3A
Qgd
td(on)
tr
td(off)
VDD = 10V
ID = 1A , VGS = 4.5V , RG = 6Ω
tf
IS
VSD IS = 1.3A, VGS = 0 V
* Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
■ Marking
Marking
9926D
Min Typ Max Unit
20
V
1 μA
0.5 1 1.5 V
±100 nA
0.026 0.032
Ω
0.037 0.045
15
A
11
S
700
pF
175
pF
85
pF
7 10
1.2
nC
1.9
8 16
10 18
ns
18 29
5 10
1.3 A
0.65 1.2 V
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