SI9926DY Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual N-Channel MOSFET
SI9926DY (KI9926DY)
■ Features
● RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V
● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V.
TSSOP-8
6.45
+0.1
-0.1
4.45
+0.1
-0.1
MOSFET
Unit: mm
D1
D2
S1
S2
S1
S2
G1
G2
1 : Drain1 5 : Gate2
2 : Source1 6 : Source2
3 : Source1 7 : Source2
4 : Gate1 8 : Drain2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25℃
TA = 70℃
Thermal Resistance,Junction-to-Ambient
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
Tj.Tstg
Rating
20
±10
6.5
20
1.25
0.8
100
-55 to +150
Unit
V
V
A
A
W
W
℃/W
℃
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